Growth and optical properties of InAs/GaAs quantum dot structures
Identifieur interne : 000475 ( Russie/Analysis ); précédent : 000474; suivant : 000476Growth and optical properties of InAs/GaAs quantum dot structures
Auteurs : RBID : Pascal:05-0035391Descripteurs français
- Pascal (Inist)
- Point quantique, Couche épitaxique, Croissance film, Epitaxie jet moléculaire, Microscopie force atomique, Photoluminescence, Effet température, Ségrégation, Matériau dopé, Multicouche, Hétérostructure, Système 2 dimensions, Gaz électron, Indium arséniure, Semiconducteur, Composé binaire, Gallium arséniure, Silicium, Aluminium arséniure, Composé ternaire, As In, InAs, As Ga, GaAs, Si, Al As Ga, AlGaAs, Composé minéral.
- Wicri :
- concept : Composé minéral.
English descriptors
- KwdEn :
- Aluminium arsenides, Atomic force microscopy, Binary compounds, Doped materials, Electron gas, Epitaxial layers, Film growth, Gallium arsenides, Heterostructures, Indium arsenides, Inorganic compounds, Molecular beam epitaxy, Multilayers, Photoluminescence, Quantum dots, Segregation, Semiconductor materials, Silicon, Temperature effects, Ternary compounds, Two-dimensional systems.
Abstract
The growth and optical properties of InAs/GaAs(0 0 1) quantum dot (QD) structures depending on the deposition parameters are investigated. The epitaxial layers were grown in a Riber 32P MBE system and studied by atomic force microscopy and photoluminescence (PL). For a single QD with 2.7 monolayers (ML) of InAs deposited at a rate of 0.25 ML/s the dots have a dome shape and with increasing substrate temperature Ts from 460 to 520 °C their surface density decreases from 2 x 1010 to 1.2 x 1010cm-2 and the mean lateral size increases from 40 to 70 nm, the dots height does not exceed 8 nm. At low beam equivalent pressure of As (below 3 x 10-6Torr) and higher Ts the segregation of In occurs. The multiple stacked QD structures (2.7 or 4 ML of InAs with 4 ML GaAs spacer) with the more uniform morphology in the upper layers providing the intense and narrow PL spectrum are formed at Ts = 490 °C and the flux ratio As4/In = 25. The high-quality modulated Si-doped InAs/GaAs QDs-based multilayer heterostructures N-AlGaAs/GaAs/InAs/GaAs/InAs/GaAs/... /GaAs with the two-dimensional (2D) electron gas of high-density were grown and studied for the first time and in their low-temperature PL spectra the features associated with quantum confinement effects were observed.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Growth and optical properties of InAs/GaAs quantum dot structures</title><author><name sortKey="Trofimov, Vladimir I" uniqKey="Trofimov V">Vladimir I. Trofimov</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Institute of Radioengineering & Electronics of RAS, 11/7 Mokhovaya Street</s1><s2>125009 Moscow</s2><s3>RUS</s3><sZ>1 aut.</sZ></inist:fA14><country>Russie</country><placeName><settlement type="city">Moscou</settlement><region>District fédéral central</region></placeName></affiliation></author><author><name>HEE SEOK PARK</name><affiliation wicri:level="3"><inist:fA14 i1="02"><s1>Korea Signal, 39-1, Hawelgok-dong, Sungbook-Ku, Venture town 107, Korea Institute of Science & Technology</s1><s2>Seoul</s2><s3>KOR</s3><sZ>2 aut.</sZ></inist:fA14><country>Corée du Sud</country><placeName><settlement type="city">Séoul</settlement></placeName></affiliation></author><author><name sortKey="Kim, Jong Il" uniqKey="Kim J">Jong-Il Kim</name><affiliation wicri:level="1"><inist:fA14 i1="03"><s1>School of Information Technology and Engineering, Korea University of Technology and Education</s1><s2>Chung Nam-Do 330-708</s2><s3>KOR</s3><sZ>3 aut.</sZ></inist:fA14><country>Corée du Sud</country><wicri:noRegion>Chung Nam-Do 330-708</wicri:noRegion></affiliation></author></titleStmt><publicationStmt><idno type="inist">05-0035391</idno><date when="2004">2004</date><idno type="stanalyst">PASCAL 05-0035391 INIST</idno><idno type="RBID">Pascal:05-0035391</idno><idno type="wicri:Area/Main/Corpus">00AA03</idno><idno type="wicri:Area/Main/Repository">00B595</idno><idno type="wicri:Area/Russie/Extraction">000475</idno></publicationStmt><seriesStmt><idno type="ISSN">0169-4332</idno><title level="j" type="abbreviated">Appl. surf. sci.</title><title level="j" type="main">Applied surface science</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Aluminium arsenides</term><term>Atomic force microscopy</term><term>Binary compounds</term><term>Doped materials</term><term>Electron gas</term><term>Epitaxial layers</term><term>Film growth</term><term>Gallium arsenides</term><term>Heterostructures</term><term>Indium arsenides</term><term>Inorganic compounds</term><term>Molecular beam epitaxy</term><term>Multilayers</term><term>Photoluminescence</term><term>Quantum dots</term><term>Segregation</term><term>Semiconductor materials</term><term>Silicon</term><term>Temperature effects</term><term>Ternary compounds</term><term>Two-dimensional systems</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Point quantique</term><term>Couche épitaxique</term><term>Croissance film</term><term>Epitaxie jet moléculaire</term><term>Microscopie force atomique</term><term>Photoluminescence</term><term>Effet température</term><term>Ségrégation</term><term>Matériau dopé</term><term>Multicouche</term><term>Hétérostructure</term><term>Système 2 dimensions</term><term>Gaz électron</term><term>Indium arséniure</term><term>Semiconducteur</term><term>Composé binaire</term><term>Gallium arséniure</term><term>Silicium</term><term>Aluminium arséniure</term><term>Composé ternaire</term><term>As In</term><term>InAs</term><term>As Ga</term><term>GaAs</term><term>Si</term><term>Al As Ga</term><term>AlGaAs</term><term>Composé minéral</term></keywords><keywords scheme="Wicri" type="concept" xml:lang="fr"><term>Composé minéral</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">The growth and optical properties of InAs/GaAs(0 0 1) quantum dot (QD) structures depending on the deposition parameters are investigated. The epitaxial layers were grown in a Riber 32P MBE system and studied by atomic force microscopy and photoluminescence (PL). For a single QD with 2.7 monolayers (ML) of InAs deposited at a rate of 0.25 ML/s the dots have a dome shape and with increasing substrate temperature T<sub>s</sub> from 460 to 520 °C their surface density decreases from 2 x 10<sup>10</sup> to 1.2 x 10<sup>10</sup>cm<sup>-2</sup> and the mean lateral size increases from 40 to 70 nm, the dots height does not exceed 8 nm. At low beam equivalent pressure of As (below 3 x 10<sup>-6</sup>Torr) and higher T<sub>s</sub> the segregation of In occurs. The multiple stacked QD structures (2.7 or 4 ML of InAs with 4 ML GaAs spacer) with the more uniform morphology in the upper layers providing the intense and narrow PL spectrum are formed at T<sub>s</sub> = 490 °C and the flux ratio As<sub>4</sub>/In = 25. The high-quality modulated Si-doped InAs/GaAs QDs-based multilayer heterostructures N-AlGaAs/GaAs/InAs/GaAs/InAs/GaAs/... /GaAs with the two-dimensional (2D) electron gas of high-density were grown and studied for the first time and in their low-temperature PL spectra the features associated with quantum confinement effects were observed.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0169-4332</s0></fA01><fA03 i2="1"><s0>Appl. surf. sci.</s0></fA03><fA05><s2>226</s2></fA05><fA06><s2>1-3</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Growth and optical properties of InAs/GaAs quantum dot structures</s1></fA08><fA09 i1="01" i2="1" l="ENG"><s1>Nanostructures from clusters</s1></fA09><fA11 i1="01" i2="1"><s1>TROFIMOV (Vladimir I.)</s1></fA11><fA11 i1="02" i2="1"><s1>HEE SEOK PARK</s1></fA11><fA11 i1="03" i2="1"><s1>KIM (Jong-Il)</s1></fA11><fA12 i1="01" i2="1"><s1>PEREZ (Alain)</s1><s9>ed.</s9></fA12><fA12 i1="02" i2="1"><s1>PUGLISI (Orazio)</s1><s9>ed.</s9></fA12><fA14 i1="01"><s1>Institute of Radioengineering & Electronics of RAS, 11/7 Mokhovaya Street</s1><s2>125009 Moscow</s2><s3>RUS</s3><sZ>1 aut.</sZ></fA14><fA14 i1="02"><s1>Korea Signal, 39-1, Hawelgok-dong, Sungbook-Ku, Venture town 107, Korea Institute of Science & Technology</s1><s2>Seoul</s2><s3>KOR</s3><sZ>2 aut.</sZ></fA14><fA14 i1="03"><s1>School of Information Technology and Engineering, Korea University of Technology and Education</s1><s2>Chung Nam-Do 330-708</s2><s3>KOR</s3><sZ>3 aut.</sZ></fA14><fA15 i1="01"><s1>Laboratoire de Physique de la Matière Condensée et Nanostructures, Université Claude Bernard Lyon 1 and CNRS</s1><s2>69622 Villeurbanne</s2><s3>FRA</s3><sZ>1 aut.</sZ></fA15><fA15 i1="02"><s1>Dipartimento di Scienze Chimiche dell'Università di Catania</s1><s2>95125 Catania</s2><s3>ITA</s3><sZ>2 aut.</sZ></fA15><fA18 i1="01" i2="1"><s1>European Materials Research Society</s1><s2>Strasbourg</s2><s3>FRA</s3><s9>patr.</s9></fA18><fA20><s1>45-51</s1></fA20><fA21><s1>2004</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>16002</s2><s5>354000117010760090</s5></fA43><fA44><s0>0000</s0><s1>© 2005 INIST-CNRS. All rights reserved.</s1></fA44><fA45><s0>19 ref.</s0></fA45><fA47 i1="01" i2="1"><s0>05-0035391</s0></fA47><fA60><s1>P</s1><s2>C</s2></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Applied surface science</s0></fA64><fA66 i1="01"><s0>NLD</s0></fA66><fC01 i1="01" l="ENG"><s0>The growth and optical properties of InAs/GaAs(0 0 1) quantum dot (QD) structures depending on the deposition parameters are investigated. The epitaxial layers were grown in a Riber 32P MBE system and studied by atomic force microscopy and photoluminescence (PL). For a single QD with 2.7 monolayers (ML) of InAs deposited at a rate of 0.25 ML/s the dots have a dome shape and with increasing substrate temperature T<sub>s</sub> from 460 to 520 °C their surface density decreases from 2 x 10<sup>10</sup> to 1.2 x 10<sup>10</sup>cm<sup>-2</sup> and the mean lateral size increases from 40 to 70 nm, the dots height does not exceed 8 nm. At low beam equivalent pressure of As (below 3 x 10<sup>-6</sup>Torr) and higher T<sub>s</sub> the segregation of In occurs. The multiple stacked QD structures (2.7 or 4 ML of InAs with 4 ML GaAs spacer) with the more uniform morphology in the upper layers providing the intense and narrow PL spectrum are formed at T<sub>s</sub> = 490 °C and the flux ratio As<sub>4</sub>/In = 25. The high-quality modulated Si-doped InAs/GaAs QDs-based multilayer heterostructures N-AlGaAs/GaAs/InAs/GaAs/InAs/GaAs/... /GaAs with the two-dimensional (2D) electron gas of high-density were grown and studied for the first time and in their low-temperature PL spectra the features associated with quantum confinement effects were observed.</s0></fC01><fC02 i1="01" i2="3"><s0>001B60</s0></fC02><fC02 i1="02" i2="3"><s0>001B70</s0></fC02><fC02 i1="03" i2="3"><s0>001B80</s0></fC02><fC03 i1="01" i2="3" l="FRE"><s0>Point quantique</s0><s5>01</s5></fC03><fC03 i1="01" i2="3" l="ENG"><s0>Quantum dots</s0><s5>01</s5></fC03><fC03 i1="02" i2="3" l="FRE"><s0>Couche épitaxique</s0><s5>02</s5></fC03><fC03 i1="02" i2="3" l="ENG"><s0>Epitaxial layers</s0><s5>02</s5></fC03><fC03 i1="03" i2="3" l="FRE"><s0>Croissance film</s0><s5>03</s5></fC03><fC03 i1="03" i2="3" l="ENG"><s0>Film growth</s0><s5>03</s5></fC03><fC03 i1="04" i2="3" l="FRE"><s0>Epitaxie jet moléculaire</s0><s5>04</s5></fC03><fC03 i1="04" i2="3" l="ENG"><s0>Molecular beam epitaxy</s0><s5>04</s5></fC03><fC03 i1="05" i2="3" l="FRE"><s0>Microscopie force atomique</s0><s5>05</s5></fC03><fC03 i1="05" i2="3" l="ENG"><s0>Atomic force microscopy</s0><s5>05</s5></fC03><fC03 i1="06" i2="3" l="FRE"><s0>Photoluminescence</s0><s5>06</s5></fC03><fC03 i1="06" i2="3" l="ENG"><s0>Photoluminescence</s0><s5>06</s5></fC03><fC03 i1="07" i2="3" l="FRE"><s0>Effet température</s0><s5>07</s5></fC03><fC03 i1="07" i2="3" l="ENG"><s0>Temperature effects</s0><s5>07</s5></fC03><fC03 i1="08" i2="3" l="FRE"><s0>Ségrégation</s0><s5>08</s5></fC03><fC03 i1="08" i2="3" l="ENG"><s0>Segregation</s0><s5>08</s5></fC03><fC03 i1="09" i2="3" l="FRE"><s0>Matériau dopé</s0><s5>09</s5></fC03><fC03 i1="09" i2="3" l="ENG"><s0>Doped materials</s0><s5>09</s5></fC03><fC03 i1="10" i2="3" l="FRE"><s0>Multicouche</s0><s5>10</s5></fC03><fC03 i1="10" i2="3" l="ENG"><s0>Multilayers</s0><s5>10</s5></fC03><fC03 i1="11" i2="3" l="FRE"><s0>Hétérostructure</s0><s5>11</s5></fC03><fC03 i1="11" i2="3" l="ENG"><s0>Heterostructures</s0><s5>11</s5></fC03><fC03 i1="12" i2="3" l="FRE"><s0>Système 2 dimensions</s0><s5>12</s5></fC03><fC03 i1="12" i2="3" l="ENG"><s0>Two-dimensional systems</s0><s5>12</s5></fC03><fC03 i1="13" i2="3" l="FRE"><s0>Gaz électron</s0><s5>13</s5></fC03><fC03 i1="13" i2="3" l="ENG"><s0>Electron gas</s0><s5>13</s5></fC03><fC03 i1="14" i2="3" l="FRE"><s0>Indium arséniure</s0><s2>NK</s2><s5>15</s5></fC03><fC03 i1="14" i2="3" l="ENG"><s0>Indium arsenides</s0><s2>NK</s2><s5>15</s5></fC03><fC03 i1="15" i2="3" l="FRE"><s0>Semiconducteur</s0><s5>16</s5></fC03><fC03 i1="15" i2="3" l="ENG"><s0>Semiconductor materials</s0><s5>16</s5></fC03><fC03 i1="16" i2="3" l="FRE"><s0>Composé binaire</s0><s5>17</s5></fC03><fC03 i1="16" i2="3" l="ENG"><s0>Binary compounds</s0><s5>17</s5></fC03><fC03 i1="17" i2="3" l="FRE"><s0>Gallium arséniure</s0><s2>NK</s2><s5>18</s5></fC03><fC03 i1="17" i2="3" l="ENG"><s0>Gallium arsenides</s0><s2>NK</s2><s5>18</s5></fC03><fC03 i1="18" i2="3" l="FRE"><s0>Silicium</s0><s2>NC</s2><s5>19</s5></fC03><fC03 i1="18" i2="3" l="ENG"><s0>Silicon</s0><s2>NC</s2><s5>19</s5></fC03><fC03 i1="19" i2="3" l="FRE"><s0>Aluminium arséniure</s0><s2>NK</s2><s5>20</s5></fC03><fC03 i1="19" i2="3" l="ENG"><s0>Aluminium arsenides</s0><s2>NK</s2><s5>20</s5></fC03><fC03 i1="20" i2="3" l="FRE"><s0>Composé ternaire</s0><s5>21</s5></fC03><fC03 i1="20" i2="3" l="ENG"><s0>Ternary compounds</s0><s5>21</s5></fC03><fC03 i1="21" i2="3" l="FRE"><s0>As In</s0><s4>INC</s4><s5>32</s5></fC03><fC03 i1="22" i2="3" l="FRE"><s0>InAs</s0><s4>INC</s4><s5>33</s5></fC03><fC03 i1="23" i2="3" l="FRE"><s0>As Ga</s0><s4>INC</s4><s5>34</s5></fC03><fC03 i1="24" i2="3" l="FRE"><s0>GaAs</s0><s4>INC</s4><s5>35</s5></fC03><fC03 i1="25" i2="3" l="FRE"><s0>Si</s0><s4>INC</s4><s5>36</s5></fC03><fC03 i1="26" i2="3" l="FRE"><s0>Al As Ga</s0><s4>INC</s4><s5>37</s5></fC03><fC03 i1="27" i2="3" l="FRE"><s0>AlGaAs</s0><s4>INC</s4><s5>38</s5></fC03><fC03 i1="28" i2="3" l="FRE"><s0>Composé minéral</s0><s5>62</s5></fC03><fC03 i1="28" i2="3" l="ENG"><s0>Inorganic compounds</s0><s5>62</s5></fC03><fN21><s1>017</s1></fN21><fN44 i1="01"><s1>OTO</s1></fN44><fN82><s1>OTO</s1></fN82></pA><pR><fA30 i1="01" i2="1" l="ENG"><s1>EMRS 2003-Symposium F</s1><s3>Strasbourg FRA</s3><s4>2003-06-10</s4></fA30></pR></standard></inist></record>Pour manipuler ce document sous Unix (Dilib)
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